mosfet metaloxidesemiconductorfieldeffecttransistor baredie optimos?3powermostransistorchip IPC014N03L3 datasheet rev.2.5 final industrial&multimarket
2 optimos?3powermostransistorchip IPC014N03L3 rev.2.5,2014-10-03 final data sheet powermostransistorchip 1description ?n-channelenhancementmode ?fordynamiccharacterizationrefertothedatasheetofipd135n03lg ?aql0.65forvisualinspectionaccordingtofailurecatalogue ?electrostaticdischargesensitivedeviceaccordingtomil-std883c ?diebond:solderedorglued ?backsidemetallization:nivsystem ?frontsidemetallization:alcusystem ?passivation:nitride+imide table1keyperformanceparameters parameter value unit v (br)dss 30 v r ds(on) 13.5 1) m w die size 1.64 x 0.845 mm 2 thickness 175 m type/orderingcode package marking relatedlinks IPC014N03L3 chip not defined - 2electricalcharacteristicsonwaferlevel at t j =25c,unlessotherwisespecified table2 values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 30 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 1 - 2.2 v v ds = v gs , i d =250a zero gate voltage drain current i dss - 0.1 2 a v gs =0v, v ds =30v gate-source leakage current i gss - 10 100 na v gs =20v, v ds =0v drain-source on- resistance r ds(on) - 10.3 2) 50 3) m w v gs =10v, i d =2.0a reverse diode forward on-voltage v sd - 0.86 1.1 v v gs =0v, i f =1a 1) packaged in a pg-to263-7 (see ref. product) 2) typicalbaredie r ds(on) ; v gs =10v,whenusedwith4x500mal-wedgedoublestitchbonding 3) limited by wafer test-equipment d r a i n g a t e s o u r c e
3 optimos?3powermostransistorchip IPC014N03L3 rev.2.5,2014-10-03 final data sheet 3packageoutlines figure1outlinechip,dimensionsinm d r a i n g a t e s o u r c e
4 optimos?3powermostransistorchip IPC014N03L3 rev.2.5,2014-10-03 final data sheet revisionhistory IPC014N03L3 revision:2014-10-03,rev.2.5 previous revision revision date subjects (major changes since last revision) 2.5 2014-10-03 release final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n g a t e s o u r c e
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